feb.1999 mitsubishi thyristor modules TM60SZ-M medium power general use non-insulated type outline drawing & circuit diagram dimensions in mm application welders TM60SZ-M ? i t (av) average on-state current ............ 60a ? v rrm repetitive peak reverse voltage ................ 400v ? v drm repetitive peak off-state voltage ................ 400v ? triple arms ? non-insulated type 93.5 80 26 2 f 6.5 12.5 3?5 k 3 k 2 k 1 g 3 k 3 g 2 k 2 g 1 k 1 k 3 k 2 k 1 17.5 20 20 30 21 6.5 9 k 3 g 3 k 3 k 2 g 2 k 1 g 1 k 2 k 1 a cr 3 cr 2 cr 1 a tab#110, t=0.5 label
feb.1999 absolute maximum ratings unit v v v v v v mitsubishi thyristor modules TM60SZ-M medium power general use non-insulated type m 400 480 320 400 480 320 symbol v rrm v rsm v r (dc) v drm v dsm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage dc off-state voltage unit a a a a 2 s a/ m s w w v v a c c nm kgcm nm kgcm g conditions three-phase, half-wave, t c =125 c one half cycle at 60hz, peak value value for one cycle of surge current v d =1/2v drm , i g =1.0a, t j =150 c main terminal screw m5 mounting screw m6 typical value ratings 95 60 1200 6.0 10 3 50 5.0 0.5 10 5.0 2.0 C40~+150 C40~+125 1.47~1.96 15~20 1.96~2.94 20~30 160 symbol i t (rms) i t (av) i tsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge (non-repetitive) on-state current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature mounting torque weight voltage class electrical characteristics unit ma ma v v/ m s v v ma c/w c/w limits symbol i rrm i drm v tm dv/dt v gt v gd i gt r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage critical rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current thermal resistance contact thermal resistance test conditions t j =150 c, v rrm applied t j =150 c, v drm applied t j =150 c, i tm =180a, instantaneous meas. t j =150 c, v d =2/3v drm t j =25 c, v d =6v, r l =2 w t j =150 c, v d =1/2v drm t j =25 c, v d =6v, r l =2 w junction to case (per 1/3 module) case to fin, conductive grease applied (per 1/3 module) min. 200 0.25 15 typ. max. 25 25 1.2 3.0 100 0.3 0.3
feb.1999 ? 10 ? 10 ? 10 0 10 0 10 1 10 1 10 0 10 4 10 3 10 2 10 1 10 ? 10 3 10 2 10 1 10 0 10 7 5 3 2 7 5 3 2 7 5 3 2 3 2 7 5 3 2 7 5 3 2 4 7 5 4 v gt =3.0v i gt = 100ma i fgm =2.0a p gm =5.0w v fgm =10v v gd =0.25v p g(av) = 0.50w t j =25? 0.6 7 5 3 2 7 5 3 2 7 5 3 2 0.8 1.0 1.6 2.0 1.4 1.2 1.8 t j =150? 70 50 30 20 7 5 3 2 0 200 1600 10 1 100 400 600 800 1000 1200 1400 7 5 3 2 7 5 3 2 7 5 3 2 0.40 0 7 5 3 2 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0 080 30 10 50 70 80 10 20 30 40 50 60 70 20 40 60 q =30 120 90 180 60 150 70 06080 10 20 50 80 90 100 110 120 130 140 30 40 70 q =30 60 90 q 360 180 120 per single element resistive, inductive load resistive, inductive load per single element q 360 mitsubishi thyristor modules TM60SZ-M medium power general use non-insulated type performance curves maximum on-state characteristic rated surge (non-repetitive) on-state current gate characteristics maximum transient thermal impedance (junction to case) on-state current (a) gate voltage (v) surge (non-repetitive) on-state current (a) transient thermal impedance ( c/w) conduction time (cycle at 60hz) on-state voltage (v) gate current (ma) time (s) maximum average on-stage power dissipation (single phase halfwave) limiting value of the average on-state current (single phase halfwave) average on-state current (a) average on-state current (a) average on-state power dissipation (w) case temperature ( c)
feb.1999 mitsubishi thyristor modules TM60SZ-M medium power general use non-insulated type maximum average on-state power dissipation (rectangular wave) limiting value of the average on-state current (rectangular wave) average on-state current (a) average on-state current (a) case temperature ( c) average on-state power dissipation (w) 100 0 100 20 150 80 110 40 60 120 130 140 q 360 q =30 60 270 dc 180 90 120 resistive, inductive load 0 0 100 20 100 80 20 40 60 40 60 80 q 360 q =30 60 270 dc 180 120 90 resistive, inductive load per single element per single element
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